US Patent Issued to Silicon Storage Technology on Sept. 15 for "Sequential erase for tuning the program state of non-volatile memory cells" (American, French Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,325, issued on Sept. 15, was assigned to Silicon Storage Technology Inc. (San Jose, Calif.).

"Sequential erase for tuning the program state of non-volatile memory cells" was invented by Steven Lemke (Boulder Creek, Calif.), Gilles Festes (Fuveau, France), Louisa Schneider (San Jose, Calif.) and Yuri Tkachev (Sunnyvale, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method and device for erasing a memory cell with a floating gate, by applying successive first erase pulses to the memory cell to remove electrons from the floating gate until a coarse target read current, and then applying successive second erase pulses to the memory cell to re...