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US Patent Issued to Board of Regents of the University of Nebraska on Sept. 8 for "HfS 3 field-effect transistors with a two-dimensional hole gas" (Nebraska Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,196, issued on Sept. 8, was assigned to Board of Regents of the University of Nebraska (Lincoln, Neb.). "HfS 3 field-effect transistors wit... Read More


US Patent Issued to Intel on Sept. 8 for "Back-end-of-line 2D transistor" (Oregon Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,197, issued on Sept. 8, was assigned to Intel Corp. (Santa Clara, Calif.). "Back-end-of-line 2D transistor" was invented by Chia-Ching Lin ... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 8 for "Semiconductor device and method of manufacture" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,198, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device and method of ... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 8 for "Gate resistance reduction through low-resistivity conductive layer" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,199, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Gate resistance reduction through l... Read More


US Patent Issued to Intel on Sept. 8 for "Non-epitaxial electrical coupling between a front side trench connector and back side contacts of a transistor" (Oregon Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,200, issued on Sept. 8, was assigned to Intel Corp. (Santa Clara, Calif.). "Non-epitaxial electrical coupling between a front side trench c... Read More


US Patent Issued to SHANGHAI BRIGHT POWER SEMICONDUCTOR on Sept. 8 for "Metal-oxide semiconductor field-effect transistor having enhanced high-frequency performance and methods for fabricating same" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,201, issued on Sept. 8, was assigned to SHANGHAI BRIGHT POWER SEMICONDUCTOR Co. LTD. (Shanghai). "Metal-oxide semiconductor field-effect tr... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Transistor" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,202, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Transistor" was invented by Wooyeol Maeng (H... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 8 for "Semiconductor device and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,203, issued on Sept. 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device and method... Read More


US Patent Issued to ROHM on Sept. 8 for "Semiconductor device and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,204, issued on Sept. 8, was assigned to ROHM Co. LTD. (Kyoto, Japan). "Semiconductor device and method of manufacturing the same" was inven... Read More


US Patent Issued to SEMICONDUCTOR COMPONENTS INDUSTRIES on Sept. 8 for "Vertical shielded gate accumulation field effect transistor" (American, Belgian Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,206, issued on Sept. 8, was assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES LLC (Scottsdale, Ariz.). "Vertical shielded gate accumulation f... Read More