US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 8 for "Gate resistance reduction through low-resistivity conductive layer" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,199, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Gate resistance reduction through low-resistivity conductive layer" was invented by Chung-Chiang Wu (Taichung City, Taiwan), Po-Cheng Chen (Jiaoxi Township, Taiwan), Kuo-Chan Huang (Hsinchu, Taiwan), Hung-Chin Chung (Pingzhen City, Taiwan), Hsien-Ming Lee (Changhua, Taiwan) and Chien-Hao Chen (Chuangwei Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a semiconductor fin, and a gate stack on sidewalls and a top surface of the semiconductor fin. The gate stack includes a high-k dielectric layer, a work-function laye...