US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 8 for "Semiconductor device and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,203, issued on Sept. 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and method for manufacturing the same" was invented by Hsin-Fu Lin (Hsinchu, Taiwan), Chien-Hung Liu (Hsinchu, Taiwan) and Tsung-Hao Yeh (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor layer, a drift region, a source area, a well region, a drain area, and a dielectric film. The drift region and the source area are formed in the semiconductor layer. The well region is formed in the semiconductor layer and between the drift region and the source area. The drain ...