ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,202, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Transistor" was invented by Wooyeol Maeng (Hwaseong-si, South Korea), Hyungjin Lee (Seoul, South Korea) and Huichul Shin (Uijeongbu-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor includes a substrate including a P-type-sub region doped with P-type impurities, a well region positioned at an upper portion of the substrate and doped with P-type impurities, a gate structure on the well region, and drain and source regions. The gate structure includes a gate insulation layer, first and second conductive patterns for adjusting a thre...