ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,635, issued on Sept. 8, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.). "Delay circuitry based on pseudo-SRAM cells f... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,636, issued on Sept. 8, was assigned to NUMEM INC. (Sunnyvale, Calif.). "Reconfigurable compute memory having selection logic to control co... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,637, issued on Sept. 8, was assigned to Aril Computer Corp. (Los Altos, Calif.). "Multi-port static random-access memory (SRAM) with buffer... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,638, issued on Sept. 8, was assigned to Vervain LLC (Plano, Texas). "Lifetime mixed level non-volatile memory system" was invented by G. R.... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,639, issued on Sept. 8, was assigned to Micron Technology Inc. (Boise, Idaho). "Forward-looking determination of read voltage using memory ... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,640, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Non-volatile content addressable memory d... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,641, issued on Sept. 8, was assigned to Micron Technology Inc. (Boise, Idaho). "Microelectronic devices including interconnections, related... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,642, issued on Sept. 8, was assigned to Micron Technology Inc. (Boise, Idaho). "Elongated capacitors in 3D NAND memory devices" was invente... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,643, issued on Sept. 8, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Method and system for adjustable top select g... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,644, issued on Sept. 8, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Program operations in memory devices" was inv... Read More