US Patent Issued to Micron Technology on Sept. 8 for "Elongated capacitors in 3D NAND memory devices" (California Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,642, issued on Sept. 8, was assigned to Micron Technology Inc. (Boise, Idaho).

"Elongated capacitors in 3D NAND memory devices" was invented by Yu-Chung Lien (San Jose, Calif.) and Zhenming Zhou (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device can include a substrate of semiconductor material and multiple stacks of memory cells disposed within the substrate. Each of the stacks can include a conductive string that connects memory cells to a bitline where each memory cell is located at an intersection of the conductive string and a wordline. The device can also include capacitor having a cylindrical body disposed...