US Patent Issued to Aril Computer on Sept. 8 for "Multi-port static random-access memory (SRAM) with buffered read port andn pass gates to same write bit line" (California Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,637, issued on Sept. 8, was assigned to Aril Computer Corp. (Los Altos, Calif.).

"Multi-port static random-access memory (SRAM) with buffered read port andn pass gates to same write bit line" was invented by Sinan Doluca (Saratoga, Calif.) and Thomas Riordan (Los Altos, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A multi-port memory cell has a write-only cell and a buffered read port. The write-only cell has cross-coupled inverters and transmission gates to write bit lines. Each transmission gate has n-channel and p-channel transistors in parallel that both turn on during writing but remain off for reading. A node in the cross-coupled inve...