US Patent Issued to Micron Technology on Sept. 8 for "Forward-looking determination of read voltage using memory cell patterns" (Italian, American Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,639, issued on Sept. 8, was assigned to Micron Technology Inc. (Boise, Idaho).

"Forward-looking determination of read voltage using memory cell patterns" was invented by Umberto di Vincenzo (Capriate San Gervasio, Italy), Ferdinando Bedeschi (Biassono, Italy) and Christian Marc Benoit Caillat (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Systems, methods, and apparatus for a memory device that uses multiple groups of pattern cells to select a voltage for reading memory cells. In one approach, a controller applies different magnitude levels of voltages to each of the groups of pattern cells. The controller determines which of the group...