ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,639, issued on Sept. 8, was assigned to Micron Technology Inc. (Boise, Idaho). "Forward-looking determination of read voltage using memory ... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,640, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Non-volatile content addressable memory d... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,641, issued on Sept. 8, was assigned to Micron Technology Inc. (Boise, Idaho). "Microelectronic devices including interconnections, related... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,642, issued on Sept. 8, was assigned to Micron Technology Inc. (Boise, Idaho). "Elongated capacitors in 3D NAND memory devices" was invente... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,643, issued on Sept. 8, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Method and system for adjustable top select g... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,644, issued on Sept. 8, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Program operations in memory devices" was inv... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,645, issued on Sept. 8, was assigned to KIOXIA Corp. (Tokyo). "Semiconductor memory device with reduced write voltage using channel floatin... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,646, issued on Sept. 8, was assigned to SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Corp. (Shanghai). "Split-gate memory array and m... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,647, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Electronic device for manufacturing of semic... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,648, issued on Sept. 8, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Non-volatile memory with word line ramp sensing for ... Read More