US Patent Issued to KIOXIA on Sept. 8 for "Semiconductor memory device with reduced write voltage using channel floating and capacitive coupling" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,645, issued on Sept. 8, was assigned to KIOXIA Corp. (Tokyo).

"Semiconductor memory device with reduced write voltage using channel floating and capacitive coupling" was invented by Yuki Inuzuka (Yokohama Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device including: circuitry configured to perform control to cause a channel of a first memory string including a first memory cell and a second memory cell connected in series to be in a floating state in which the channel is electrically insulated from a first bit line connected to a first end of the first memory string and a source line connected to a second en...