ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,201, issued on Sept. 8, was assigned to SHANGHAI BRIGHT POWER SEMICONDUCTOR Co. LTD. (Shanghai). "Metal-oxide semiconductor field-effect tr... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,202, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Transistor" was invented by Wooyeol Maeng (H... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,203, issued on Sept. 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device and method... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,204, issued on Sept. 8, was assigned to ROHM Co. LTD. (Kyoto, Japan). "Semiconductor device and method of manufacturing the same" was inven... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,206, issued on Sept. 8, was assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES LLC (Scottsdale, Ariz.). "Vertical shielded gate accumulation f... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,207, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor devices" was invented by Sangh... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,208, issued on Sept. 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Methods for forming devices wit... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,209, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Integrated circuit device" was invented by H... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,210, issued on Sept. 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor structure includi... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,211, issued on Sept. 8, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Multilayer inner spacer for gate-all-around device" ... Read More