US Patent Issued to Taiwan Semiconductor Manufacturing on April 14 for "Profile control of isolation structures in semiconductor devices" (Taiwanese Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,503, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Profile control of isolation stru... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on April 14 for "Profile control of isolation structures in semiconductor devices" (Taiwanese Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,503, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Profile control of isolation stru... Read More

US Patent Issued to Infineon Technologies on April 14 for "Shielding structure for silicon carbide devices" (German Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,504, issued on April 14, was assigned to Infineon Technologies AG (Neubiberg, Germany). "Shielding structure for silicon carbide devices" ... Read More

US Patent Issued to Infineon Technologies on April 14 for "Shielding structure for silicon carbide devices" (German Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,504, issued on April 14, was assigned to Infineon Technologies AG (Neubiberg, Germany). "Shielding structure for silicon carbide devices" ... Read More

US Patent Issued to NAMI MOS on April 14 for "SiC trench MOSFET with an embedded junction barrier Schottky diode" (Chinese, Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,505, issued on April 14, was assigned to NAMI MOS Co. LTD. (New Taipei City, Taiwan). "SiC trench MOSFET with an embedded junction barrier... Read More

US Patent Issued to NAMI MOS on April 14 for "SiC trench MOSFET with an embedded junction barrier Schottky diode" (Chinese, Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,505, issued on April 14, was assigned to NAMI MOS Co. LTD. (New Taipei City, Taiwan). "SiC trench MOSFET with an embedded junction barrier... Read More

US Patent Issued to Regents of the University of Minnesota on April 14 for "Non-covalent modification of graphene-based chemical sensors" (Pennsylvania, Minnesota Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,506, issued on April 14, was assigned to Regents of the University of Minnesota (Minneapolis). "Non-covalent modification of graphene-base... Read More

US Patent Issued to Regents of the University of Minnesota on April 14 for "Non-covalent modification of graphene-based chemical sensors" (Pennsylvania, Minnesota Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,506, issued on April 14, was assigned to Regents of the University of Minnesota (Minneapolis). "Non-covalent modification of graphene-base... Read More

US Patent Issued to Renesas Electronics on April 14 for "Method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,507, issued on April 14, was assigned to Renesas Electronics Corp. (Tokyo). "Method of manufacturing semiconductor device" was invented by... Read More

US Patent Issued to Renesas Electronics on April 14 for "Method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,507, issued on April 14, was assigned to Renesas Electronics Corp. (Tokyo). "Method of manufacturing semiconductor device" was invented by... Read More

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