US Patent Issued to Taiwan Semiconductor Manufacturing on April 14 for "Profile control of isolation structures in semiconductor devices" (Taiwanese Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,503, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Profile control of isolation structures in semiconductor devices" was invented by Tzu-Ging Lin (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of fabricating the semiconductor device are disclosed. The method includes forming first and second nanostructured layers on first and second fin bases, forming cladding layers on sidewalls of the first and second nanostructured layers, forming a polysilicon structure on the first and second nanostructured layers, removing a portion of the polysilicon ...