ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,845, issued on Nov. 3, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Storage device and method for refresh operation by detecting... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,847, issued on Nov. 3, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Coarse/fine programming of non-volatile memory for tig... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,849, issued on Nov. 3, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Semiconductor device and method of operating the semiconduct... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,851, issued on Nov. 3, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Advanced dummy word line ramp down after program verif... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,852, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL TAIWAN UNIVERSITY (Taip... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,853, issued on Nov. 3, was assigned to Everdisplay Optronics (Shanghai) Co. Ltd. (Shanghai). "Shift register unit, gate driving circuit and ... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,854, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Memory device for counting sequence of operati... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,855, issued on Nov. 3, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Testing method and memory module under test" was i... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,856, issued on Nov. 3, was assigned to Altera Corp. (San Jose, Calif.). "Built-in-self-test circuits and methods in sectors of integrated ci... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,857, issued on Nov. 3, was assigned to CXMT Corp. (Hefei City, China). "Memory" was invented by Weibing Shang (Hefei City, China), Xiangyun ... Read More