US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL TAIWAN UNIVERSITY on Nov. 3 for "Memory device and method for operating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,852, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL TAIWAN UNIVERSITY (Taipei, Taiwan).

"Memory device and method for operating the same" was invented by Jenn-Gwo Hwu (Taipei City, Taiwan) and Sung-Wei Huang (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a memory device is provided. The method includes forming first and second metal-insulator-semiconductor (MIS) structures, wherein each of the first and second MIS structures comprises a semiconductor layer, an insulating layer over the semiconductor layer, and a metal electrode layer over the ...