ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,785, issued on Nov. 3. "Memory devices having special mode access" was invented by Theodore T. Pekny (Sunnyvale, Calif.) and Victor Y. Tsai ... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,786, issued on Nov. 3, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan). "Three-dimensional memory device, computing circui... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,787, issued on Nov. 3, was assigned to Micron Technology Inc. (Boise, Idaho). "Sense amplifier balancing component" was invented by Christop... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,788, issued on Nov. 3, was assigned to UIF (UNIVERSITY INDUSTRY FOUNDATION), YONSEI UNIVESITY (Seoul, South Korea). "Compute-in-memory devic... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,789, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Memory device, operation method of memory devi... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,790, issued on Nov. 3, was assigned to Intel NDTM US LLC (Santa Clara, Calif.). "Word line voltage detection circuit for enhanced read opera... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,791, issued on Nov. 3, was assigned to STMicroelectronics International N.V. (Geneva). "SRAM with fast, controlled peak current, power effic... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,792, issued on Nov. 3, was assigned to STMicroelectronics International N.V. (Geneva). "SRAM with fast, controlled peak current, power effic... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,793, issued on Nov. 3, was assigned to Magtera Inc. (Walnut Creek, Calif.). "Magnetic memory based on tunable Ruderman-Kittel-Kasuya-Yosida ... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,794, issued on Nov. 3, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Layout pattern of magnetoresistive random acc... Read More