US Patent Issued to STMicroelectronics International on Nov. 3 for "SRAM with fast, controlled peak current, power efficient array reset, and data corruption modes for secure applications" (Indian Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,792, issued on Nov. 3, was assigned to STMicroelectronics International N.V. (Geneva).

"SRAM with fast, controlled peak current, power efficient array reset, and data corruption modes for secure applications" was invented by Praveen Kumar Verma (Greater Noida, India), Promod Kumar (Greater Noida, India) and Harsh Rawat (Faridabad, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes an array powered between virtual supply and reference voltages, with each row having a wordline and each column having a bitline and complementary bitline. The virtual supply voltage circuit includes a first transistor configured to output the virtual su...