ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,786, issued on Nov. 3, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).
"Three-dimensional memory device, computing circuit and computing method" was invented by Yu-Hsuan Lin (Taichung City, Taiwan) and Feng-Min Lee (Hsinchu City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional (3D) memory device comprising a 3D memory array, an encoding circuit, a sensing circuit and a processing circuit is provided in present disclosure. The 3D memory array comprises multiple two-dimensional (2D) memory arrays and is configured to receive multiple input voltages and output multiple output currents. Each 2D memory array co...