US Patent Issued to UNITED MICROELECTRONICS on Nov. 3 for "Layout pattern of magnetoresistive random access memory" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,794, issued on Nov. 3, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"Layout pattern of magnetoresistive random access memory" was invented by Hung-Chan Lin (Tainan City, Taiwan), Jia-Rong Wu (Kaohsiung City, Taiwan) and Yi-Ting Wu (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A layout pattern of a magnetoresistive random access memory (MRAM) includes a substrate having a first cell region, a second cell region, a third cell region, and a fourth cell region, a first gate pattern extending from the first cell region to the third cell region along a first direction, a first diffusion region extending from ...