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US Patent Issued to Kioxia on Nov. 3 for "Semiconductor storage element and manufacturing method thereof" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,292, issued on Nov. 3, was assigned to Kioxia Corp. (Tokyo). "Semiconductor storage element and manufacturing method thereof" was invented b... Read More


US Patent Issued to Sandisk Technologies on Nov. 3 for "Three-dimensional memory device with self-aligned word line contact via structures and method of making the same" (American, Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,293, issued on Nov. 3, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Three-dimensional memory device with self-aligned word... Read More


US Patent Issued to SK hynix on Nov. 3 for "Semiconductor memory device" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,294, issued on Nov. 3, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Semiconductor memory device" was invented by Jae Taek Kim (I... Read More


US Patent Issued to SUNRISE MEMORY on Nov. 3 for "Memory device and method for manufacturing therefor" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,295, issued on Nov. 3, was assigned to SUNRISE MEMORY Corp. (San Jose, Calif.). "Memory device and method for manufacturing therefor" was in... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,296, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Jeonil L... Read More


US Patent Issued to SUNRISE MEMORY on Nov. 3 for "Fabrication method for a three-dimensional memory array of thin-film ferroelectric transistors using high-aspect-ratio local word line damascene process" (Japanese, American, Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,297, issued on Nov. 3, was assigned to SUNRISE MEMORY Corp. (San Jose, Calif.). "Fabrication method for a three-dimensional memory array of ... Read More


US Patent Issued to Kepler Computing on Nov. 3 for "Method of integrating a patterned capacitor and transistor through wafer bonding" (American, Belgian Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,298, issued on Nov. 3, was assigned to Kepler Computing Inc. (San Francisco). "Method of integrating a patterned capacitor and transistor th... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 3 for "Memory array and methods of forming same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,299, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Memory array and methods of forming s... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 3 for "MFMIS memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,300, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "MFMIS memory device" was invented by ... Read More


US Patent Issued to SAMSUNG ELECTRONICS, UIF (University Industry Foundation), Yonsei University on Nov. 3 for "Metal chalcogenide film, memory element including same, and method for manufacturing phase-change heterolayer" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,301, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea) and UIF (University Industry Foundation), Yons... Read More