US Patent Issued to Kioxia on Nov. 3 for "Semiconductor storage element and manufacturing method thereof" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,292, issued on Nov. 3, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor storage element and manufacturing method thereof" was invented by Tomonari Shioda (Nagoya, Japan) and Saori Matsushita (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor storage element according to the present embodiment includes a laminated body, a semiconductor layer, a first insulator, a second insulator, a third insulator, and a fourth insulator. In the laminated body, the insulating layers and conductive layers are alternately laminated in a first direction. The third insulator is disposed between the laminated body and the second insulator...