US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 3 for "Memory array and methods of forming same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,299, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory array and methods of forming same" was invented by Yu-Ming Lin (Hsinchu, Taiwan), Bo-Feng Young (Taipei, Taiwan), Sai-Hooi Yeong (Zhubei, Taiwan), Han-Jong Chia (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a semiconductor substrate; a first word line over the semiconductor substrate, the first word line providing a first gate electrode for a first transistor; and a second word line over the first word line. The second word line is insulated from the first word line by a fi...