US Patent Issued to SUNRISE MEMORY on Nov. 3 for "Fabrication method for a three-dimensional memory array of thin-film ferroelectric transistors using high-aspect-ratio local word line damascene process" (Japanese, American, Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,297, issued on Nov. 3, was assigned to SUNRISE MEMORY Corp. (San Jose, Calif.).

"Fabrication method for a three-dimensional memory array of thin-film ferroelectric transistors using high-aspect-ratio local word line damascene process" was invented by Shohei Kamisaka (Kanagawa, Japan), Yosuke Nosho (Tokyo), Usha Raghuram (Saratoga, Calif.), Kavita Shah (Mountain View, Calif.), Jie Zhou (San Jose, Calif.), Iting Lin (Hsinchu, Taiwan) and Eli Harari (Saratoga, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A fabrication process for a memory structure including three-dimensional arrays of thin-film ferroelectric storage transistors is disclosed. I...