ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,784, issued on April 14, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Stack packages and methods of manufacturing the same" wa... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,784, issued on April 14, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Stack packages and methods of manufacturing the same" wa... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,785, issued on April 14, was assigned to POWERTECH TECHNOLOGY INC. (Hsinchu County, Taiwan). "Package structure and manufacturing method t... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,785, issued on April 14, was assigned to POWERTECH TECHNOLOGY INC. (Hsinchu County, Taiwan). "Package structure and manufacturing method t... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,786, issued on April 14, was assigned to Intel Corp. (Santa Clara, Calif.). "Method of atomic diffusion hybrid bonding and apparatus made ... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,786, issued on April 14, was assigned to Intel Corp. (Santa Clara, Calif.). "Method of atomic diffusion hybrid bonding and apparatus made ... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,601,707, issued on April 14, was assigned to SUZHOU INDUSTRIAL PARK FUTES AUTOMOTIVE ELECTRONICS Co. LTD (Suzhou, China). "Symmetric structura... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,601,708, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Biosensor devices and methods of ... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,601,709, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device with sensor ... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,601,710, issued on April 14, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.). "Ion-sensitive field-effect transistors with local-field... Read More