US Patent Issued to GlobalFoundries U.S. on April 14 for "Ion-sensitive field-effect transistors with local-field bias" (American, Belgian Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,601,710, issued on April 14, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Ion-sensitive field-effect transistors with local-field bias" was invented by Judson Holt (Ballston Lake, N.Y.), Bartlomiej Jan Pawlak (Leuven, Belgium) and Vibhor Jain (Essex Junction, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Structures for an ion-sensitive field-effect transistor and methods of forming same. The structure comprises a semiconductor substrate, a microfluidic channel above the semiconductor substrate, a semiconductor layer including a portion positioned as a sensing layer in the microfluidic channel, a first electrical connection coupled to ...