ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,198, issued on Sept. 1, was assigned to Powerchip Semiconductor Manufacturing Corp. (Hsinchu, Taiwan). "High frequency transistor" was inve... और पढ़ें
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,199, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor devices" was invented by Jungg... और पढ़ें
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,200, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Transistor, semiconductor device, a... और पढ़ें
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,201, issued on Sept. 1, was assigned to Century Technology (Shenzhen) Corporation Limited (Shenzhen, China). "Thin film transistor, thin fi... और पढ़ें
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,202, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Integrated circuit and formation me... और पढ़ें
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,203, issued on Sept. 1, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China). "Semiconductor device and fabrica... और पढ़ें
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,204, issued on Sept. 1, was assigned to IOTMEMORY TECHNOLOGY INC. (Taipei City, Taiwan). "Non-volatile memory device" was invented by Der-T... और पढ़ें
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,205, issued on Sept. 1, was assigned to Intel Corp. (Santa Clara, Calif.). "3D source and drain contacts tuned for PMOS and NMOS" was inven... और पढ़ें
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,206, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor device including two-dimens... और पढ़ें
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,207, issued on Sept. 1, was assigned to NANJING UNIVERSITY (Nanjing, China). "Structure of two-dimensional material-based device having air... और पढ़ें