ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,201, issued on Sept. 1, was assigned to Century Technology (Shenzhen) Corporation Limited (Shenzhen, China).
"Thin film transistor, thin film transistor array substrate and method of manufacturing thin film transistor" was invented by Chan-Kuan Huang (New Taipei, Taiwan), Tuan-Fei Gu (Shenzhen, China), Deng-Kai Chang (New Taipei, Taiwan) and Tai-Hsing Lee (New Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a TFT. The TFT includes a gate electrode, an insulating layer on the gate electrode, and an active layer on the insulating layer. The active layer includes an annealed layer and an a-Si layer. The ann...