US Patent Issued to Fujian Jinhua Integrated Circuit on Sept. 1 for "Semiconductor device and fabricating method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,203, issued on Sept. 1, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China).

"Semiconductor device and fabricating method thereof" was invented by Gang Wu (Quanzhou City, China), Mingru Ge (Quanzhou City, China), Guoguo Kong (Quanzhou City, China), Shiwei He (Quanzhou City, China), Wangqin Yang (Quanzhou City, China) and Yongjian Yu (Quanzhou City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device and a fabricating method thereof includes a source structure, a drain structure, a gate structure, a bottom dielectric layer, a gate dielectric layer, a channel structur...