US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Magnetic tunnel junction structures and related methods" (Taiwanese Inventors)

पोस्टेड ऑन: 2026-09-01

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,168, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Magnetic tunnel junction structures... और पढ़ें

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Thermally enhanced selector structure and methods of forming the same" (Taiwanese Inventors)

पोस्टेड ऑन: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,169, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Thermally enhanced selector structu... और पढ़ें

US Patent Issued to SK hynix on Sept. 1 for "Semiconductor device and method of manufacturing the semiconductor device" (South Korean Inventor)

पोस्टेड ऑन: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,170, issued on Sept. 1, was assigned to SK hynix Inc. (Icheon, South Korea). "Semiconductor device and method of manufacturing the semicond... और पढ़ें

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Three dimensional semiconductor device with memory stack" (Taiwanese Inventors)

पोस्टेड ऑन: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,171, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Three dimensional semiconductor dev... और पढ़ें

US Patent Issued to SK hynix on Sept. 1 for "Semiconductor device and manufacturing method of semiconductor device" (South Korean Inventors)

पोस्टेड ऑन: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,172, issued on Sept. 1, was assigned to SK hynix Inc. (Icheon, South Korea). "Semiconductor device and manufacturing method of semiconducto... और पढ़ें

US Patent Issued to Yangtze Memory Technologies on Sept. 1 for "Memory device structure and fabrication method" (Chinese Inventors)

पोस्टेड ऑन: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,173, issued on Sept. 1, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Memory device structure and fabrication metho... और पढ़ें

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Three-dimensional semiconductor memory device with dummy plug and electronic system including the same" (South Korean Inventors)

पोस्टेड ऑन: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,174, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Three-dimensional semiconductor memory devic... और पढ़ें

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Semiconductor package and method of manufacturing the same" (South Korean Inventor)

पोस्टेड ऑन: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,175, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor package and method of manufact... और पढ़ें

US Patent Issued to Yangtze Memory Technologies on Sept. 1 for "Three-dimensional memory devices and manufacturing methods thereof and three-dimensional memories" (Chinese Inventor)

पोस्टेड ऑन: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,176, issued on Sept. 1, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Three-dimensional memory devices and manufact... और पढ़ें

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 1 for "Package with integrated voltage regulator and method forming the same" (Taiwanese Inventors)

पोस्टेड ऑन: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,177, issued on Sept. 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan). "Package with integrated voltage reg... और पढ़ें

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US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Magnetic tunnel junction structures and related methods" (Taiwanese Inventors)

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Thermally enhanced selector structure and methods of forming the same" (Taiwanese Inventors)

US Patent Issued to SK hynix on Sept. 1 for "Semiconductor device and method of manufacturing the semiconductor device" (South Korean Inventor)

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Three dimensional semiconductor device with memory stack" (Taiwanese Inventors)

US Patent Issued to SK hynix on Sept. 1 for "Semiconductor device and manufacturing method of semiconductor device" (South Korean Inventors)

US Patent Issued to Yangtze Memory Technologies on Sept. 1 for "Memory device structure and fabrication method" (Chinese Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Three-dimensional semiconductor memory device with dummy plug and electronic system including the same" (South Korean Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Semiconductor package and method of manufacturing the same" (South Korean Inventor)

US Patent Issued to Yangtze Memory Technologies on Sept. 1 for "Three-dimensional memory devices and manufacturing methods thereof and three-dimensional memories" (Chinese Inventor)

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 1 for "Package with integrated voltage regulator and method forming the same" (Taiwanese Inventors)