ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,640, issued on Sept. 22, was assigned to Mitsubishi Electric Corp. (Tokyo). "Semiconductor device, power conversion device and moving body... Read More
ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,641, issued on Sept. 22, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor devices with du... Read More
ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,642, issued on Sept. 22, was assigned to Intel Corp. (Santa Clara, Calif.). "Device, method, and system to mitigate warpage of a composite... Read More
ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,643, issued on Sept. 22, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor package including support me... Read More
ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,644, issued on Sept. 22, was assigned to Rockwell Collins Inc. (Cedar Rapids, Iowa). "Mechanical mitigation of neutron see" was invented b... Read More
ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,645, issued on Sept. 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Integrated circuit packages and m... Read More
ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,646, issued on Sept. 22, was assigned to Amkor Technology Singapore Holding Pte. Ltd. (Singapore). "Electronic devices and methods of manu... Read More
ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,647, issued on Sept. 22, was assigned to Mitsubishi Electric Corp. (Tokyo). "High frequency transistor" was invented by Shinsuke Watanabe ... Read More
ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,648, issued on Sept. 22, was assigned to Intel Corp. (Santa Clara, Calif.). "Microelectronic assembly having antiferromagnetic film struct... Read More
ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,649, issued on Sept. 22, was assigned to Sumitomo Electric Device Innovations Inc. (Yokohama, Japan). "Semiconductor device and wafer" was... Read More