ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,649, issued on Sept. 22, was assigned to Sumitomo Electric Device Innovations Inc. (Yokohama, Japan).

"Semiconductor device and wafer" was invented by Takeshi Hishida (Yokohama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate having an upper surface and a lower surface, a metal layer provided on the lower surface of the substrate, a semiconductor element including first electrodes provided on the upper surface of the substrate, connected to the metal layer via through holes penetrating the substrate, and electrically separated from each other on the upper surface of the substrate, second electrodes p...