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US Patent Issued to Intel on Sept. 22 for "Transistor backside routing layers with contacts having varying depths" (Oregon Inventor)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,442, issued on Sept. 22, was assigned to Intel Corp. (Santa Clara, Calif.). "Transistor backside routing layers with contacts having varyi... और पढ़ें


US Patent Issued to UNITED MICROELECTRONICS on Sept. 22 for "Semiconductor transistor structure and fabrication method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,443, issued on Sept. 22, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Semiconductor transistor structure and fa... और पढ़ें


US Patent Issued to DENSO, TOYOTA JIDOSHA, MIRISE Technologies on Sept. 22 for "Semiconductor device and method for manufacturing the same" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,444, issued on Sept. 22, was assigned to DENSO Corp. (Kariya-city, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan) and MIRISE Technologies Corp... और पढ़ें


US Patent Issued to ROHM on Sept. 22 for "Wide band gap semiconductor device with surface insulating film" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,445, issued on Sept. 22, was assigned to ROHM Co. LTD. (Kyoto, Japan). "Wide band gap semiconductor device with surface insulating film" w... और पढ़ें


US Patent Issued to Winbond Electronics on Sept. 22 for "Semiconductor structure and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,446, issued on Sept. 22, was assigned to Winbond Electronics Corp. (Taichung City, Taiwan). "Semiconductor structure and method of forming... और पढ़ें


US Patent Issued to Fraunhofer-Gesellschaft zur Forderung der Angewandten Forschung on Sept. 22 for "Structural element with improved ferroelectric polarisation switching and reliability and method for producing said structural element" (German Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,447, issued on Sept. 22, was assigned to Fraunhofer-Gesellschaft zur Forderung der Angewandten Forschung E.V. (Munich). "Structural elemen... और पढ़ें


US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 22 for "Semiconductor structure and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,448, issued on Sept. 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor structure and metho... और पढ़ें


US Patent Issued to CAMBRIDGE GAN DEVICES on Sept. 22 for "Current sensing in power semiconductor devices" (British Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,449, issued on Sept. 22, was assigned to CAMBRIDGE GAN DEVICES Ltd. (Cambridge, Great Britain). "Current sensing in power semiconductor de... और पढ़ें


US Patent Issued to SAMSUNG ELECTRONICS on Sept. 22 for "Semiconductor device with channel structures and impurity region structures" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,450, issued on Sept. 22, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device with channel structur... और पढ़ें


US Patent Issued to SAMSUNG ELECTRONICS on Sept. 22 for "Semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,451, issued on Sept. 22, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Jinw... और पढ़ें