ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,444, issued on Sept. 22, was assigned to DENSO Corp. (Kariya-city, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan) and MIRISE Technologies Corp. (Nisshin, Japan).

"Semiconductor device and method for manufacturing the same" was invented by Fumihito Tachibana (Nisshin, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate having a trench adjacent to an upper surface, a gate insulating film inside the trench, a gate electrode on the gate insulating film inside the trench, and an interlayer insulating film covering the gate electrode inside the trench. The semiconductor substrate has a connection su...