US Patent Issued to ROHM on Sept. 22 for "Wide band gap semiconductor device with surface insulating film" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,445, issued on Sept. 22, was assigned to ROHM Co. LTD. (Kyoto, Japan).

"Wide band gap semiconductor device with surface insulating film" was invented by Yuki Nakano (Kyoto, Japan) and Ryota Nakamura (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device of the present invention includes a semiconductor layer of a first conductivity type having a cell portion and an outer peripheral portion disposed around the cell portion, and a surface insulating film disposed in a manner extending across the cell portion and the outer peripheral portion, and in the cell portion, formed to be thinner than a part in the outer peripheral...