ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,451, issued on Sept. 22, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device" was invented by Jinwoo Lee (Seoul, South Korea), Yunse Oh (Anseong-si, South Korea), Byung-Sung Kim (Suwon-si, South Korea), Sutae Kim (Suwon-si, South Korea) and Seung Choi (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a semiconductor device including: a substrate including a first active pattern separated into a pair of first active patterns by a trench; a device isolation layer filling the trench; first source/drain patterns on the first active pattern; a first channel pattern connected to the...