US Patent Issued to Intel on Nov. 3 for "Gate cut, with asymmetrical channel to gate cut spacing" (Oregon Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,422, issued on Nov. 3, was assigned to Intel Corp. (Santa Clara, Calif.). "Gate cut, with asymmetrical channel to gate cut spacing" was inve... Read More

US Patent Issued to Intel on Nov. 3 for "Plug between two gates of a semiconductor device" (Oregon, Washington Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,423, issued on Nov. 3, was assigned to Intel Corp. (Santa Clara, Calif.). "Plug between two gates of a semiconductor device" was invented by... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 3 for "Semiconductor device structure and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,425, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device structure an... Read More

US Patent Issued to Intel on Nov. 3 for "Integrated circuit structures having fin isolation regions recessed for gate contact" (Oregon Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,426, issued on Nov. 3, was assigned to Intel Corp. (Santa Clara, Calif.). "Integrated circuit structures having fin isolation regions recess... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Semiconductor devices" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,427, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor devices" was invented by Hee Jeo... Read More

US Patent Issued to International Business Machines on Nov. 3 for "Gate tie-down for top field effect transistor" (New York Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,428, issued on Nov. 3, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Gate tie-down for top field effect transistor"... Read More

US Patent Issued to International Business Machines on Nov. 3 for "Lateral passive diodes co-integrated with nanosheet technology" (California, New York, Connecticut Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,429, issued on Nov. 3, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Lateral passive diodes co-integrated with nano... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Cell architecture with improved backside power rail through engineering change order" (New York, Virginia Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,430, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (South Korea). "Cell architecture with improved backside power rail thro... Read More

US Patent Issued to Chongqing BOE Optoelectronics Technology, BOE TECHNOLOGY GROUP on Nov. 3 for "Display substrate including conductive connection electrode, preparation method thereof, and display apparatus" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,431, issued on Nov. 3, was assigned to Chongqing BOE Optoelectronics Technology Co. Ltd. (Chongqing, China) and BOE TECHNOLOGY GROUP Co. LTD.... Read More

US Patent Issued to Shenzhen China Star Optoelectronics Semiconductor Display Technology on Nov. 3 for "Display panel including active layer having conductor part and method of manufacturing same" (Chinese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,432, issued on Nov. 3, was assigned to Shenzhen China Star Optoelectronics Semiconductor Display Technology Co. Ltd. (Shenzhen, China). "Dis... Read More

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