US Patent Issued to International Business Machines on Nov. 3 for "Lateral passive diodes co-integrated with nanosheet technology" (California, New York, Connecticut Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,429, issued on Nov. 3, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Lateral passive diodes co-integrated with nanosheet technology" was invented by Shahrukh Khan (Sandy Hook, Conn.), Biswanath Senapati (Mechanicville, N.Y.), Utkarsh Bajpai (Delmar, N.Y.), Chen Zhang (Santa Clara, Calif.), Huimei Zhou (Albany, N.Y.), Junli Wang (Slingerlands, N.Y.) and Jay William Strane (Wappingers Falls, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is provided that includes a lateral passive diode co-integrated with nanosheet stacked FET technology. Notably, the semiconductor structure includes a passive/dio...