US Patent Issued to International Business Machines on Nov. 3 for "Gate tie-down for top field effect transistor" (New York Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,428, issued on Nov. 3, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Gate tie-down for top field effect transistor" was invented by Ruilong Xie (Niskayuna, N.Y.), Julien Frougier (Albany, N.Y.), Min Gyu Sung (Latham, N.Y.), Chanro Park (Clifton Park, N.Y.) and Juntao Li (Cohoes, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes a stacked field effect transistor (FET) structure. The stacked FET structure includes a bottom FET device, a top FET device overlying the bottom FET device, dielectric material interposed between the bottom FET device and the top F...