US Patent Issued to Applied Materials on Nov. 3 for "Semiconductor devices containing bi-metallic silicide with reduced contact resistivity" (California Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,412, issued on Nov. 3, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Semiconductor devices containing bi-metallic silicide ... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Semiconductor devices" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,413, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor devices" was invented by Sunghwa... Read More

US Patent Issued to ENKRIS SEMICONDUCTOR on Nov. 3 for "HEMT devices and manufacturing methods thereof" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,414, issued on Nov. 3, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China). "HEMT devices and manufacturing methods thereof" was inven... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 3 for "Method for forming epitaxial source/drain features using a self-aligned mask and semiconductor devices fabricated thereof" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,415, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Method for forming epitaxial sour... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 3 for "Image sensor gate structure and doping profile" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,416, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Image sensor gate structure and dopin... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 3 for "Integrated circuit packages and methods" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,417, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Integrated circuit packages and metho... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 3 for "Semiconductor device structure with isolation layer and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,418, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device structure with i... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 3 for "Semiconductor Fin cutting process and structures formed thereby" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,419, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor Fin cutting process and... Read More

US Patent Issued to CAMBRIDGE GAN DEVICES on Nov. 3 for "Manufacturing methods for a power semiconductor device" (British Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,420, issued on Nov. 3, was assigned to CAMBRIDGE GAN DEVICES Ltd. (Cambridge, Great Britain). "Manufacturing methods for a power semiconduct... Read More

US Patent Issued to International Business Machines on Nov. 3 for "Semiconductor device with lateral diodes and stacked FETs" (Vermont, California, New York, Connecticut Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,421, issued on Nov. 3, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Semiconductor device with lateral diodes and s... Read More

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