US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 3 for "Semiconductor device structure with isolation layer and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,418, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device structure with isolation layer and method for forming the same" was invented by Da-Zhi Zhang (New Taipei City, Taiwan), Chung-Pin Huang (New Taipei City, Taiwan), Po-Nien Chen (Miaoli County, Taiwan), Hsiao-Han Liu (Miaoli County, Taiwan), Jhon-Jhy Liaw (Zhudong Township, Hsinchu County, Taiwan) and Chih-Yung Lin (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device structure is provided. The method includes providing a substrate having a base, a first fin, and a secon...