US Patent Issued to ENKRIS SEMICONDUCTOR on Nov. 3 for "HEMT devices and manufacturing methods thereof" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,414, issued on Nov. 3, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China).

"HEMT devices and manufacturing methods thereof" was invented by Peng Xiang (Suzhou, China) and Kai Cheng (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a HEMT device and a manufacturing method thereof. The HEMT device includes: a substrate, a heterojunction structure, a P-type semiconductor layer, a first stress layer and/or a second stress layer, a gate, a source and a drain, where the first stress layer is located on the opposite sidewalls of the P-type semiconductor layer, and is configured to apply compressive stress t...