US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 3 for "Semiconductor Fin cutting process and structures formed thereby" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,419, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor Fin cutting process and structures formed thereby" was invented by Shih-Wen Huang (Tainan City, Taiwan), Jaming Chang (Miaoli County, Taiwan), Kai Hung Cheng (Tainan City, Taiwan), Chia-Hui Lin (Dajia Township, Taiwan) and Jei Ming Chen (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin on a substrate, a second fin on the substrate, and a fin cut-fill structure disposed between the first fin and the...