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US Patent Issued to LS CABLE & SYSTEM on July 14 for "Composite material self-wrap shielding tube" (South Korean Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,750, issued on July 14, was assigned to LS CABLE & SYSTEM LTD. (Anyang-si, South Korea). "Composite material self-wrap shielding tube" was ... Read More


US Patent Issued to United Microelectronics on July 14 for "Static random access memory including three-dimensional diodes" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,751, issued on July 14, was assigned to United Microelectronics Corp. (Hsinchu, Taiwan). "Static random access memory including three-dimen... Read More


US Patent Issued to Semiconductor Manufacturing International (Shanghai) on July 14 for "Semiconductor structure and method of forming semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,752, issued on July 14, was assigned to Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai). "Semiconductor structure and... Read More


US Patent Issued to Semiconductor Energy Laboratory on July 14 for "Memory device" (Japanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,753, issued on July 14, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan). "Memory device" was invented by Takanori ... Read More


US Patent Issued to Seoul National University R&DB foundation on July 14 for "Capacitorless 3D DRAM device and manufacturing method thereof" (South Korean Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,754, issued on July 14, was assigned to Seoul National University R&DB foundation (Seoul, South Korea). "Capacitorless 3D DRAM device and m... Read More


US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 14 for "Semiconductor structure and method for forming same" (Chinese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,755, issued on July 14, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure and method for form... Read More


US Patent Issued to Fujian Jinhua Integrated Circuit on July 14 for "Active region structure and the forming method thereof" (Chinese Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,756, issued on July 14, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China). "Active region structure and the ... Read More


US Patent Issued to TC Lab on July 14 for "Multi-layer random access memory and methods of manufacture" (California Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,757, issued on July 14, was assigned to TC Lab Inc. (Gilroy, Calif.). "Multi-layer random access memory and methods of manufacture" was inv... Read More


US Patent Issued to Applied Materials on July 14 for "3-D DRAM structures and methods of manufacture" (California Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,758, issued on July 14, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "3-D DRAM structures and methods of manufacture" was ... Read More


US Patent Issued to SAMSUNG ELECTRONICS on July 14 for "Semiconductor device and method of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,759, issued on July 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor device and method of manufa... Read More