US Patent Issued to Semiconductor Manufacturing International (Shanghai) on July 14 for "Semiconductor structure and method of forming semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,752, issued on July 14, was assigned to Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai).

"Semiconductor structure and method of forming semiconductor structure" was invented by Yijun Zhang (Shanghai) and Bo Su (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structure and forming method thereof are provided. The semiconductor structure includes a substrate and a plurality of transistors located over the substrate. A transistor of the plurality of transistors includes: a channel layer parallel to a substrate surface, a gate structure surrounding the channel layer, and a source/drain doped region located on ...