US Patent Issued to TC Lab on July 14 for "Multi-layer random access memory and methods of manufacture" (California Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,757, issued on July 14, was assigned to TC Lab Inc. (Gilroy, Calif.).

"Multi-layer random access memory and methods of manufacture" was invented by Harry Luan (Saratoga, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure for a DRAM is described having multiple layers of arrays of memory cells. Memory cells in a vertical string extending through the layers have an electrical connection to one terminal of the memory cells in that string. Word lines couple the strings together. Each layer of the array also includes bit line connections to memory cells on that layer. Select transistors enable the use of folded bit lines. The...