US Patent Issued to Seoul National University R&DB foundation on July 14 for "Capacitorless 3D DRAM device and manufacturing method thereof" (South Korean Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,754, issued on July 14, was assigned to Seoul National University R&DB foundation (Seoul, South Korea).

"Capacitorless 3D DRAM device and manufacturing method thereof" was invented by Cheol Seong Hwang (Seoul, South Korea), Sun Jin Lee (Seoul, South Korea) and Seo Young Jang (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure discloses a capacitorless 3D DRAM device including a write bit line extending in a vertical direction, a write word line extending in a horizontal direction, a write transistor connected to the write bit line and the write word line, and defined to include a first channel material lay...