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US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 11 for "Semiconductor device structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,623, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device structure"... Read More


US Patent Issued to Semiconductor Energy Laboratory on Aug. 11 for "Manufacturing method of semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,624, issued on Aug. 11, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan). "Manufacturing method of semiconductor de... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL TAIWAN UNIVERSITY on Aug. 11 for "Method for forming memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,625, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL TAIWAN UNIVERSITY (Ta... Read More


US Patent Issued to Tokyo Electron on Aug. 11 for "Method for fabricating semiconductor device with oxide semiconductor material" (Japanese, American Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,626, issued on Aug. 11, was assigned to Tokyo Electron Ltd. (Tokyo). "Method for fabricating semiconductor device with oxide semiconductor ... Read More


US Patent Issued to Yangtze Memory Technologies on Aug. 11 for "Memory device and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,627, issued on Aug. 11, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Memory device and manufacturing method thereo... Read More


US Patent Issued to Micron Technology on Aug. 11 for "Memory device having 2-transistor vertical memory cell and a common plate" (Idaho Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,628, issued on Aug. 11, was assigned to Micron Technology Inc. (Boise, Idaho). "Memory device having 2-transistor vertical memory cell and ... Read More


US Patent Issued to SAMSUNG ELECTRONICS, UIF (UNIVERSITY INDUSTRY FOUNDATION), YONSEI UNIVERSITY on Aug. 11 for "Semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,629, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea) and UIF (UNIVERSITY INDUSTRY FOUNDATION), YO... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,630, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device" was invented by Jimin ... Read More


US Patent Issued to Micron Technology on Aug. 11 for "Damascene digit lines" (Idaho Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,631, issued on Aug. 11, was assigned to Micron Technology Inc. (Boise, Idaho). "Damascene digit lines" was invented by Russell A. Benson (B... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Semiconductor memory device" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,632, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor memory device" was invented by... Read More