ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,486, issued on July 28, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Integrated circuit device" was invented by H... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,487, issued on July 28, was assigned to Intel Corp. (Santa Clara, Calif.). "Selectively thinned gate-all-around (GAA) structures" was inven... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,488, issued on July 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device structure ... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,489, issued on July 28, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan). "Semiconductor device comprising contact ... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,490, issued on July 28, was assigned to BOE Technology Group Co. Ltd. (Beijing). "Semiconductor substrate manufacturing method and semicond... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,491, issued on July 28, was assigned to LG Display Co. Ltd. (Seoul, South Korea). "Thin film transistor array substrate including oxide sem... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,492, issued on July 28, was assigned to ORCA Computing Ltd. (London). "Solid-state device with optical waveguide as floating gate electrode... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,493, issued on July 28, was assigned to KIOXIA Corp. (Tokyo). "Booster circuit for semiconductor memory device" was invented by Takao Sueya... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,494, issued on July 28, was assigned to INVENTION AND COLLABORATION LABORATORY PTE. LTD. (Singapore). "Method for forming transistor struct... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,495, issued on July 28, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China). "Semiconductor device and method for fabricating ... Read More