US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 28 for "Semiconductor device and method for fabricating same" (Chinese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,495, issued on July 28, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor device and method for fabricating same" was invented by Zheng He (Hefei, China), Qiong Wu (Hefei, China) and Yi Tang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments relate to the field of semiconductors, and provide a semiconductor device and a method for manufacturing the same. The semiconductor device includes: an active pillar including a channel region and a source/drain region arranged on two sides of the channel region; and a gate structure surrounding at least part of the channel region. The channel region includes...